Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOT11S65L

Description
N-Channel 650V 11A (Tc) 198W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 650V 11A (Tc) 198W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 785-1510-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-1510-5-ND
Single FETs, MOSFETs 785-1510-5-ND
N-Channel 650V 11A (Tc) 198W (Tc) Through Hole TO-220

N-Channel 650V 11A (Tc) 198W (Tc) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT11S65L - 1017171-AOT11S65L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT11S65L
1017171-AOT11S65L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT11S65L 1017171-AOT11S65L
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017171-AOT11S65L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 198W (Tc) Family Name: AOT11S65 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 13.2nC @ 10V Max Input Capacitance: 646pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 399 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): STP13NM60ND; STP11NM60FD; STP18N60M2; Introduction Date: January 10, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 82 pct. Supply and Demand Status: Balance

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017171-AOT11S65L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 198W (Tc)
Family Name: AOT11S65
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 13.2nC @ 10V
Max Input Capacitance: 646pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 399 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): STP13NM60ND; STP11NM60FD; STP18N60M2;
Introduction Date: January 10, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 82 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
650V 11A TO220 MOSFET Transistor
278-AOT11S65L
650V 11A TO220 MOSFET Transistor 278-AOT11S65L
MOSFET N-CH 650V 11A TO220 Product overview: AOT11S65L from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 11A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 11A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-AOT11S65L can be used for catalog matching and distributor lookup.

MOSFET N-CH 650V 11A TO220 Product overview: AOT11S65L from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 11A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 11A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-AOT11S65L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOT11S65L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOT11S65L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOT11S65L
MOSFET N-CH 650V 11A TO220

MOSFET N-CH 650V 11A TO220

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 785-1510-5-ND 1017171-AOT11S65L 278-AOT11S65L AOT11S65L
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT11S65L 650V 11A TO220 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220 Tube TO-220; TO-220-3
V(BR)DSS 650 volts 650 volts
PD 198000 milliwatts 198000 milliwatts
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