Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 108890-AOP605
Packaging: Tube/Rail
Mounting: Through Hole
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PDIP
Maximum Power Dissipation: 2.5W
Drain-Source Breakdown Voltage: 30V
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 16.6nC @ 4.5V
Max Input Capacitance: 820pF @ 15V
Maximum Rds On at Id,Vgs: 28 mOhm @ 7.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 84 pct.
Supply and Demand Status: Balance
MOSFET N/P-CH 30V 8DIP Product overview: AOP605 from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-AOP605 can be used for catalog matching and distributor lookup.
Mosfet Array N and P-Channel 30V 2.5W Through Hole 8-PDIP
MOSFET N/P-CH 30V 8DIP
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 108890-AOP605 | AOP605 | 289-AOP605 | 785-1140-5-ND | AOP605 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOP605 | FET, MOSFET Arrays | 30V MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; N and P-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | |||
| PD | 2500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |