Alpha & Omega Semiconductor, Ltd. FET, MOSFET Arrays AOP605

Description
MOSFET N/P-CH 30V 8DIP
Request a Quote Datasheet
Description
MOSFET N/P-CH 30V 8DIP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - AOP605 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
AOP605
FET, MOSFET Arrays AOP605
MOSFET N/P-CH 30V 8DIP

MOSFET N/P-CH 30V 8DIP

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOP605 - 108890-AOP605 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOP605
108890-AOP605
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOP605 108890-AOP605
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 108890-AOP605 Packaging: Tube/Rail Mounting: Through Hole FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PDIP Maximum Power Dissipation: 2.5W Drain-Source Breakdown Voltage: 30V Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 16.6nC @ 4.5V Max Input Capacitance: 820pF @ 15V Maximum Rds On at Id,Vgs: 28 mOhm @ 7.5A, 10V Popularity: Medium Fake Threat In the Open Market: 84 pct. Supply and Demand Status: Balance

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 108890-AOP605
Packaging: Tube/Rail
Mounting: Through Hole
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PDIP
Maximum Power Dissipation: 2.5W
Drain-Source Breakdown Voltage: 30V
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 16.6nC @ 4.5V
Max Input Capacitance: 820pF @ 15V
Maximum Rds On at Id,Vgs: 28 mOhm @ 7.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 84 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - 785-1140-5-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
785-1140-5-ND
FET, MOSFET Arrays 785-1140-5-ND
Mosfet Array N and P-Channel 30V 2.5W Through Hole 8-PDIP

Mosfet Array N and P-Channel 30V 2.5W Through Hole 8-PDIP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOP605 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOP605
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOP605
MOSFET N/P-CH 30V 8DIP

MOSFET N/P-CH 30V 8DIP

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number AOP605 108890-AOP605 785-1140-5-ND AOP605
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOP605 FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; N and P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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