Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AONS21357

The AONS21357 is a P-Channel MOSFET designed for applications requiring high current capability and low on-resistance. It features a maximum drain-source voltage (VDS) of -30V and can handle continuous drain currents of up to -36A at a gate-source voltage (VGS) of -10V. The device exhibits a low on-resistance of less than 7.8mOc at VGS of -10V and less than 12.3mOc at VGS of -4.5V, making it suitable for efficient power management. This MOSFET is compliant with RoHS and halogen-free standards, ensuring it meets environmental regulations. It is packaged in a compact DFN 5x6 format, suitable for surface mount applications, and is available in tape and reel format with a minimum order quantity of 3000 units. The operating temperature range extends from -55¬8C to 150¬8C, providing versatility for various applications, including notebook AC-in load switches and battery protection circuits. Engineers considering this component should note its robust performance characteristics and compliance with industry standards, which may be beneficial for their design requirements.