The AONR36366 is a 30V N-Channel MOSFET designed for high-performance applications. It features a low on-resistance of less than 3.5mOc at a gate-source voltage of 10V, making it suitable for efficient power management. The device supports a continuous drain current of 34A at 25¬8C and has a maximum power dissipation of 5W. It operates over a wide temperature range from -55¬8C to 150¬8C, ensuring reliability in various environments. The MOSFET is compliant with RoHS 2.0 and is halogen-free, aligning with modern environmental standards. It is packaged in an 8-DFN-EP (3x3) format and is available in tape and reel for automated assembly processes. This component is ideal for applications such as DC/DC converters in computing and telecom systems.
MOSFET N-CH 30V 30A/34A 8DFN
Win Source Part Number: 1376810-AONR36366
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 37 pct.
MSL Level: 1 (Unlimited)
Mfr: Alpha & Omega Semiconductor Inc.
Package: Tape & Reel
Product Status: Active
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN-EP (3x3)
Base Product Number: AONR363
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 15 V
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
N-Channel 30V 30A (Ta), 34A (Tc) 5W (Ta), 28W (Tc) Surface Mount 8-DFN-EP (3x3)
N-Channel 30V 30A (Ta), 34A (Tc) 5W (Ta), 28W (Tc) Surface Mount 8-DFN-EP (3x3)
N-Channel 30V 30A (Ta), 34A (Tc) 5W (Ta), 28W (Tc) Surface Mount 8-DFN-EP (3x3)
MOSFET N-CH 30V 30A/34A 8DFN Product overview: AONR36366 from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 30A, 34A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 30A, 34A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-AONR36366 can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 30A/34A 8DFN
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | AONR36366 | 1376810-AONR36366 | 785-1850-1-ND | 278-AONR36366 | AONR36366 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | 30V 30A 34A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 30 volts | 30 volts | |||
| IDSS | 30000 milliamps | ||||
| PD | 5000 milliwatts | 5000 to 28000 milliwatts | 5000 milliwatts |
