Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AON7702B

Description
N-Channel 30V 13.5A (Ta), 20A (Tc) 3.1W (Ta), 23W (Tc) Surface Mount 8-DFN-EP (3x3)
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Description
N-Channel 30V 13.5A (Ta), 20A (Tc) 3.1W (Ta), 23W (Tc) Surface Mount 8-DFN-EP (3x3)
Request a Quote Datasheet

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Single FETs, MOSFETs - 785-1507-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-1507-2-ND
Single FETs, MOSFETs 785-1507-2-ND
N-Channel 30V 13.5A (Ta), 20A (Tc) 3.1W (Ta), 23W (Tc) Surface Mount 8-DFN-EP (3x3)

N-Channel 30V 13.5A (Ta), 20A (Tc) 3.1W (Ta), 23W (Tc) Surface Mount 8-DFN-EP (3x3)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON7702B - 1017150-AON7702B - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON7702B
1017150-AON7702B
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON7702B 1017150-AON7702B
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017150-AON7702B Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Body) Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 23W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-DFN (3x3) Dimension: 8-PowerSMD, Flat Leads Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 13.5A (Ta), 20A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 810pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 13.5A, 10V Popularity: Medium Fake Threat In the Open Market: 91 pct. Supply and Demand Status: Sufficient

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017150-AON7702B
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Body)
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 23W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-DFN (3x3)
Dimension: 8-PowerSMD, Flat Leads
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13.5A (Ta), 20A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 810pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 13.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 91 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AON7702B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AON7702B
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AON7702B
MOSFET N-CH 30V 13.5A/20A 8DFN

MOSFET N-CH 30V 13.5A/20A 8DFN

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 785-1507-2-ND 1017150-AON7702B AON7702B
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON7702B Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type 8-PowerVDFN SOT3; 8-DFN (3x3) 8-PowerVDFN
V(BR)DSS 30 volts
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