Alpha & Omega Semiconductor, Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON6998 AON6998

Description
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017117-AON6998 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-DFN-EP (5x6) Maximum Power Dissipation: 3.1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 19A, 26A Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 820pF @ 15V Maximum Rds On at Id,Vgs: 5.2 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 79 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017117-AON6998 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-DFN-EP (5x6) Maximum Power Dissipation: 3.1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 19A, 26A Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 820pF @ 15V Maximum Rds On at Id,Vgs: 5.2 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 79 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON6998 - 1017117-AON6998 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON6998
1017117-AON6998
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON6998 1017117-AON6998
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017117-AON6998 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-DFN-EP (5x6) Maximum Power Dissipation: 3.1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 19A, 26A Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 820pF @ 15V Maximum Rds On at Id,Vgs: 5.2 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 79 pct. Supply and Demand Status: Balance

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017117-AON6998
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-DFN-EP (5x6)
Maximum Power Dissipation: 3.1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 19A, 26A
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 820pF @ 15V
Maximum Rds On at Id,Vgs: 5.2 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 79 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - AON6998 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
AON6998
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays AON6998
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1017117-AON6998 AON6998
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON6998 Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
Polarity N-Channel
V(BR)DSS 30 volts
PD 3100 milliwatts
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