Alpha & Omega Semiconductor, Ltd. FET, MOSFET Arrays AON6971

Description
Mosfet Array 2 N-Channel (Half Bridge) 30V 23A, 40A 5W, 4.1W Surface Mount 8-DFN (5x6)
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Description
Mosfet Array 2 N-Channel (Half Bridge) 30V 23A, 40A 5W, 4.1W Surface Mount 8-DFN (5x6)
Request a Quote Datasheet

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Supplier Links
FET, MOSFET Arrays - 785-1631-2-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
785-1631-2-ND
FET, MOSFET Arrays 785-1631-2-ND
Mosfet Array 2 N-Channel (Half Bridge) 30V 23A, 40A 5W, 4.1W Surface Mount 8-DFN (5x6)

Mosfet Array 2 N-Channel (Half Bridge) 30V 23A, 40A 5W, 4.1W Surface Mount 8-DFN (5x6)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON6971 - 1017110-AON6971 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON6971
1017110-AON6971
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON6971 1017110-AON6971
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017110-AON6971 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-DFN-EP (5x6) Maximum Power Dissipation: 5W, 4.1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 23A, 40A Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 1010pF @ 15V Maximum Rds On at Id,Vgs: 5.7 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): SIZ916DT-T1-GE3; AON6978; FDMS3604S; Popularity: Medium Fake Threat In the Open Market: 83 pct. Supply and Demand Status: Balance

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017110-AON6971
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-DFN-EP (5x6)
Maximum Power Dissipation: 5W, 4.1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 23A, 40A
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 1010pF @ 15V
Maximum Rds On at Id,Vgs: 5.7 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): SIZ916DT-T1-GE3; AON6978; FDMS3604S;
Popularity: Medium
Fake Threat In the Open Market: 83 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AON6971 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AON6971
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AON6971
MOSFET 2N-CH 30V 23A/40A 8DFN

MOSFET 2N-CH 30V 23A/40A 8DFN

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 785-1631-2-ND 1017110-AON6971 AON6971
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON6971 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 8-PowerWDFN SOT3; 8-DFN-EP (5x6)
Polarity N-Channel
V(BR)DSS 30 volts
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