Alpha & Omega Semiconductor, Ltd. FET, MOSFET Arrays AON6912A

Description
Mosfet Array 2 N-Channel (Half Bridge) 30V 10A, 13.8A 1.9W, 2.1W Surface Mount 8-DFN (5x6)
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Half Bridge) 30V 10A, 13.8A 1.9W, 2.1W Surface Mount 8-DFN (5x6)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - AON6912A-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
AON6912A-ND
FET, MOSFET Arrays AON6912A-ND
Mosfet Array 2 N-Channel (Half Bridge) 30V 10A, 13.8A 1.9W, 2.1W Surface Mount 8-DFN (5x6)

Mosfet Array 2 N-Channel (Half Bridge) 30V 10A, 13.8A 1.9W, 2.1W Surface Mount 8-DFN (5x6)

Buy Now Datasheet
FET, MOSFET Arrays - AON6912A - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
AON6912A
FET, MOSFET Arrays AON6912A
MOSFET 2N-CH 30V 10A/13.8A 8DFN

MOSFET 2N-CH 30V 10A/13.8A 8DFN

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON6912A - 180572-AON6912A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON6912A
180572-AON6912A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON6912A 180572-AON6912A
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 180572-AON6912A Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-DFN (5x6) Maximum Power Dissipation: 1.9W, 2.1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10A, 13.8A Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 910pF @ 15V Maximum Rds On at Id,Vgs: 13.7 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 82 pct. Supply and Demand Status: Balance

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 180572-AON6912A
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-DFN (5x6)
Maximum Power Dissipation: 1.9W, 2.1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10A, 13.8A
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 910pF @ 15V
Maximum Rds On at Id,Vgs: 13.7 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 82 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
30V 10A 13.8A MOSFET Transistor
289-AON6912A
30V 10A 13.8A MOSFET Transistor 289-AON6912A
MOSFET 2N-CH 30V 10A/13.8A 8DFN Product overview: AON6912A from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A, 13.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, 13.8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-AON6912A can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 30V 10A/13.8A 8DFN Product overview: AON6912A from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A, 13.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, 13.8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-AON6912A can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AON6912A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AON6912A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AON6912A
MOSFET 2N-CH 30V 10A/13.8A 8DFN

MOSFET 2N-CH 30V 10A/13.8A 8DFN

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number AON6912A-ND AON6912A 180572-AON6912A 289-AON6912A AON6912A
Product Name FET, MOSFET Arrays FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON6912A 30V 10A 13.8A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 8-PowerVDFN 8-PowerVDFN SOT3; 8-DFN (5x6) Tape & Reel (TR)
Polarity N-Channel; 2 N-Channel (Dual) Asymmetrical N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
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