Alpha & Omega Semiconductor, Ltd. FET, MOSFET Arrays AON6910A

Description
Mosfet Array 2 N-Channel (Half Bridge) 30V 9.1A, 16A 1.9W, 2W Surface Mount 8-DFN (5x6)
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Description
Mosfet Array 2 N-Channel (Half Bridge) 30V 9.1A, 16A 1.9W, 2W Surface Mount 8-DFN (5x6)
Request a Quote Datasheet

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Product
Description
Supplier Links
FET, MOSFET Arrays - AON6910A-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
AON6910A-ND
FET, MOSFET Arrays AON6910A-ND
Mosfet Array 2 N-Channel (Half Bridge) 30V 9.1A, 16A 1.9W, 2W Surface Mount 8-DFN (5x6)

Mosfet Array 2 N-Channel (Half Bridge) 30V 9.1A, 16A 1.9W, 2W Surface Mount 8-DFN (5x6)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON6910A - 078176-AON6910A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON6910A
078176-AON6910A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON6910A 078176-AON6910A
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 078176-AON6910A Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-DFN (5x6) Maximum Power Dissipation: 1.9W, 2W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.1A, 16A Gate-Source Threshold Voltage: 2.4V @ 250μA Max Gate Charge: 9nC @ 10V Max Input Capacitance: 670pF @ 15V Maximum Rds On at Id,Vgs: 14 mOhm @ 9.1A, 10V Popularity: Medium Fake Threat In the Open Market: 86 pct. Supply and Demand Status: Balance

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 078176-AON6910A
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-DFN (5x6)
Maximum Power Dissipation: 1.9W, 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.1A, 16A
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 9nC @ 10V
Max Input Capacitance: 670pF @ 15V
Maximum Rds On at Id,Vgs: 14 mOhm @ 9.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 86 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AON6910A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AON6910A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AON6910A
MOSFET 2N-CH 30V 9.1A/16A 8DFN

MOSFET 2N-CH 30V 9.1A/16A 8DFN

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number AON6910A-ND 078176-AON6910A AON6910A
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON6910A Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 8-PowerVDFN SOT3; 8-DFN (5x6)
Polarity N-Channel
V(BR)DSS 30 volts
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