Alpha & Omega Semiconductor, Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON5810 AON5810

Description
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017023-AON5810 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-DFN-EP (2x5) Maximum Power Dissipation: 1.6W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 7.7A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 13.1nC @ 4.5V Max Input Capacitance: 1360pF @ 10V Maximum Rds On at Id,Vgs: 18 mOhm @ 7.7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 95 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017023-AON5810 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-DFN-EP (2x5) Maximum Power Dissipation: 1.6W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 7.7A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 13.1nC @ 4.5V Max Input Capacitance: 1360pF @ 10V Maximum Rds On at Id,Vgs: 18 mOhm @ 7.7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 95 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON5810 - 1017023-AON5810 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON5810
1017023-AON5810
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON5810 1017023-AON5810
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017023-AON5810 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-DFN-EP (2x5) Maximum Power Dissipation: 1.6W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 7.7A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 13.1nC @ 4.5V Max Input Capacitance: 1360pF @ 10V Maximum Rds On at Id,Vgs: 18 mOhm @ 7.7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 95 pct. Supply and Demand Status: Sufficient

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017023-AON5810
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-DFN-EP (2x5)
Maximum Power Dissipation: 1.6W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 7.7A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 13.1nC @ 4.5V
Max Input Capacitance: 1360pF @ 10V
Maximum Rds On at Id,Vgs: 18 mOhm @ 7.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 95 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
20V 7.7A MOSFET Transistor
289-AON5810
20V 7.7A MOSFET Transistor 289-AON5810
MOSFET 2N-CH 20V 7.7A 6DFN Product overview: AON5810 from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 7.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 7.7A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-AON5810 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 20V 7.7A 6DFN Product overview: AON5810 from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 7.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 7.7A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-AON5810 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - AON5810-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
AON5810-ND
FET, MOSFET Arrays AON5810-ND
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 7.7A 1.6W Surface Mount 6-DFN-EP (2x5)

Mosfet Array 2 N-Channel (Dual) Common Drain 20V 7.7A 1.6W Surface Mount 6-DFN-EP (2x5)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - AON5810 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
AON5810
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays AON5810
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1017023-AON5810 289-AON5810 AON5810-ND AON5810
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON5810 20V 7.7A MOSFET Transistor FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
Polarity N-Channel
V(BR)DSS 20 volts
PD 1600 milliwatts
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