Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AON2705

Description
P-Channel 30V 3A (Ta) 1.5W (Ta) Surface Mount 6-DFN (2x2)
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Description
P-Channel 30V 3A (Ta) 1.5W (Ta) Surface Mount 6-DFN (2x2)
Request a Quote Datasheet

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Description
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Single FETs, MOSFETs - AON2705-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
AON2705-ND
Single FETs, MOSFETs AON2705-ND
P-Channel 30V 3A (Ta) 1.5W (Ta) Surface Mount 6-DFN (2x2)

P-Channel 30V 3A (Ta) 1.5W (Ta) Surface Mount 6-DFN (2x2)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON2705 - 1017010-AON2705 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON2705
1017010-AON2705
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON2705 1017010-AON2705
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017010-AON2705 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Body) Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-DFN-EP (2x2) Dimension: 6-WDFN Exposed Pad Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 2.3V @ 250μA Max Gate Charge: 6nC @ 10V Max Input Capacitance: 180pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 108 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 75 pct. Supply and Demand Status: Balance

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017010-AON2705
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Body)
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-DFN-EP (2x2)
Dimension: 6-WDFN Exposed Pad
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 2.3V @ 250μA
Max Gate Charge: 6nC @ 10V
Max Input Capacitance: 180pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 108 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 75 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AON2705 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AON2705
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AON2705
MOSFET P-CH 30V 3A 6DFN

MOSFET P-CH 30V 3A 6DFN

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number AON2705-ND 1017010-AON2705 AON2705
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON2705 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type 6-WDFN Exposed Pad SOT3; 6-DFN-EP (2x2) 6-WDFN Exposed Pad
V(BR)DSS 30 volts
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