Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOM033V120X2Q

Description
1200V SILICON CARBIDE MOSFET
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Description
1200V SILICON CARBIDE MOSFET
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Datasheet
Datasheet Summary
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AOM033V120X2Q is a 1200 V silicon carbide power MOSFET in a TO-247-4L package, designed for automotive inverters, EV chargers, and motor drives. It features a typical on-resistance of 33 mΩ at 25°C, continuous drain current of 120 A pulsed and 48 A at 100°C case temperature, and a maximum junction temperature of 175°C. The device supports a gate-source voltage range of -5 V to +15 V and includes a low reverse recovery charge of 226 nC. Thermal resistance from junction to case is 0.5 °C/W. The part is AEC-Q101 qualified and 100% UIS tested. Package dimensions are 20.95 mm by 15.92 mm with a lead pitch of 2.54 mm.

Datasheet Summary
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AOM033V120X2Q is a 1200 V silicon carbide power MOSFET in a TO-247-4L package, designed for automotive inverters, EV chargers, and motor drives. It features a typical on-resistance of 33 mΩ at 25°C, continuous drain current of 120 A pulsed and 48 A at 100°C case temperature, and a maximum junction temperature of 175°C. The device supports a gate-source voltage range of -5 V to +15 V and includes a low reverse recovery charge of 226 nC. Thermal resistance from junction to case is 0.5 °C/W. The part is AEC-Q101 qualified and 100% UIS tested. Package dimensions are 20.95 mm by 15.92 mm with a lead pitch of 2.54 mm.

Suppliers

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Single FETs, MOSFETs - 785-AOM033V120X2Q-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-AOM033V120X2Q-ND
Single FETs, MOSFETs 785-AOM033V120X2Q-ND
1200V SILICON CARBIDE MOSFET

1200V SILICON CARBIDE MOSFET

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 785-AOM033V120X2Q-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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