Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOK5N100

Description
N-Channel 1000V 4A (Tc) 195W (Tc) Through Hole TO-247
Request a Quote Datasheet
Description
N-Channel 1000V 4A (Tc) 195W (Tc) Through Hole TO-247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - AOK5N100-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
AOK5N100-ND
Single FETs, MOSFETs AOK5N100-ND
N-Channel 1000V 4A (Tc) 195W (Tc) Through Hole TO-247

N-Channel 1000V 4A (Tc) 195W (Tc) Through Hole TO-247

Buy Now Datasheet
FETs - Single - AOK5N100 - 1144954-AOK5N100 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - AOK5N100
1144954-AOK5N100
FETs - Single - AOK5N100 1144954-AOK5N100
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1144954-AOK5N100 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.aosmd.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 195W Popularity: Medium Fake Threat In the Open Market: 80 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 240 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1000V Id - Continuous Drain Current: 4A Rds On (Maximum) at Id, Vgs: 4.2Ohm at 2.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 23nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 1150pF at 25V

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1144954-AOK5N100
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.aosmd.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 195W
Popularity: Medium
Fake Threat In the Open Market: 80 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 240
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 1000V
Id - Continuous Drain Current: 4A
Rds On (Maximum) at Id, Vgs: 4.2Ohm at 2.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 23nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 1150pF at 25V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOK5N100 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOK5N100
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOK5N100
MOSFET N-CH 1000V 4A TO247

MOSFET N-CH 1000V 4A TO247

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number AOK5N100-ND 1144954-AOK5N100 AOK5N100
Product Name Single FETs, MOSFETs FETs - Single - AOK5N100 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3 1150 pF @ 25 V
V(BR)DSS 1000 volts
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