Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOK065V65X2

Description
MOSFET N-CH 650V 40.3A TO247
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Description
MOSFET N-CH 650V 40.3A TO247
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Datasheet
Datasheet Summary
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The AOK065V65X2 is a 650V αSiC silicon carbide power MOSFET in a TO-247-3L package, designed for high-efficiency switching in renewable energy, EV charging, and industrial power applications. It has a continuous drain current of 40.3A at TC=25°C and 29.6A at TC=100°C, with a pulsed drain current rating of 85A and a maximum junction temperature of 175°C. The typical on-resistance is 65mΩ at 25°C and 90mΩ at 150°C, with a gate-source operating voltage range of -5V to +15V. The device features a low reverse recovery charge of 104nC, a single-pulsed avalanche energy of 250mJ, and is 100% UIS tested. Its junction-to-case thermal resistance is 0.8°C/W, and it meets RoHS standards.

Datasheet Summary
Powered by GS/AI

The AOK065V65X2 is a 650V αSiC silicon carbide power MOSFET in a TO-247-3L package, designed for high-efficiency switching in renewable energy, EV charging, and industrial power applications. It has a continuous drain current of 40.3A at TC=25°C and 29.6A at TC=100°C, with a pulsed drain current rating of 85A and a maximum junction temperature of 175°C. The typical on-resistance is 65mΩ at 25°C and 90mΩ at 150°C, with a gate-source operating voltage range of -5V to +15V. The device features a low reverse recovery charge of 104nC, a single-pulsed avalanche energy of 250mJ, and is 100% UIS tested. Its junction-to-case thermal resistance is 0.8°C/W, and it meets RoHS standards.

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Single FETs, MOSFETs - 785-AOK065V65X2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-AOK065V65X2-ND
Single FETs, MOSFETs 785-AOK065V65X2-ND
MOSFET N-CH 650V 40.3A TO247

MOSFET N-CH 650V 40.3A TO247

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 785-AOK065V65X2-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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