Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOI444

Description
N-Channel 60V 4A (Ta), 12A (Tc) 2.1W (Ta), 20W (Tc) Through Hole TO-251A
Request a Quote Datasheet
Description
N-Channel 60V 4A (Ta), 12A (Tc) 2.1W (Ta), 20W (Tc) Through Hole TO-251A
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - AOI444-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
AOI444-ND
Single FETs, MOSFETs AOI444-ND
N-Channel 60V 4A (Ta), 12A (Tc) 2.1W (Ta), 20W (Tc) Through Hole TO-251A

N-Channel 60V 4A (Ta), 12A (Tc) 2.1W (Ta), 20W (Tc) Through Hole TO-251A

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOI444 - 078157-AOI444 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOI444
078157-AOI444
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOI444 078157-AOI444
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 078157-AOI444 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.1W (Ta), 20W (Tc) Family Name: AOI444 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-251A Dimension: TO-251-3 Stub Leads, IPak Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 4A (Ta), 12A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 540pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 mOhm @ 12A, 10V Alternative Parts (Cross-Reference): STD16NE06-1; STD16NE06L-1; 2SK2925(L)-E; 2SK2925(L); ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 92 pct. Supply and Demand Status: Balance

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 078157-AOI444
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.1W (Ta), 20W (Tc)
Family Name: AOI444
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-251A
Dimension: TO-251-3 Stub Leads, IPak
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4A (Ta), 12A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 540pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 60 mOhm @ 12A, 10V
Alternative Parts (Cross-Reference): STD16NE06-1; STD16NE06L-1; 2SK2925(L)-E; 2SK2925(L);
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 92 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
60V 4A 12A MOSFET Transistor
278-AOI444
60V 4A 12A MOSFET Transistor 278-AOI444
MOSFET N-CH 60V 4A/12A TO251A Product overview: AOI444 from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 4A, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 4A, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-AOI444 can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 4A/12A TO251A Product overview: AOI444 from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 4A, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 4A, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-AOI444 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOI444 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOI444
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOI444
MOSFET N-CH 60V 4A/12A TO251A

MOSFET N-CH 60V 4A/12A TO251A

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number AOI444-ND 078157-AOI444 278-AOI444 AOI444
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOI444 60V 4A 12A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-251-3 Stub Leads, IPAK SOT3; TO-251A Tube TO-251-3 Stub Leads, IPak
V(BR)DSS 60 volts 60 volts
PD 2100 to 20000 milliwatts 2100 milliwatts
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