Alpha & Omega Semiconductor, Ltd. FET, MOSFET Arrays AOD609

Description
MOSFET N/P-CH 40V 12A TO252-4
Request a Quote Datasheet
Description
MOSFET N/P-CH 40V 12A TO252-4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - AOD609 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
AOD609
FET, MOSFET Arrays AOD609
MOSFET N/P-CH 40V 12A TO252-4

MOSFET N/P-CH 40V 12A TO252-4

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOD609 - 009813-AOD609 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOD609
009813-AOD609
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOD609 009813-AOD609
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 009813-AOD609 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252-4L Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 12A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 10.8nC @ 10V Max Input Capacitance: 650pF @ 20V Maximum Rds On at Id,Vgs: 30 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 84 pct. Supply and Demand Status: Limited

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 009813-AOD609
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252-4L
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 12A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 10.8nC @ 10V
Max Input Capacitance: 650pF @ 20V
Maximum Rds On at Id,Vgs: 30 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 84 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
FET, MOSFET Arrays - 785-1607-1-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
785-1607-1-ND
FET, MOSFET Arrays 785-1607-1-ND
Mosfet Array N and P-Channel, Common Drain 40V 12A 2W Surface Mount TO-252-4L

Mosfet Array N and P-Channel, Common Drain 40V 12A 2W Surface Mount TO-252-4L

Buy Now Datasheet
FET, MOSFET Arrays - 785-1607-2-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
785-1607-2-ND
FET, MOSFET Arrays 785-1607-2-ND
Mosfet Array N and P-Channel, Common Drain 40V 12A 2W Surface Mount TO-252-4L

Mosfet Array N and P-Channel, Common Drain 40V 12A 2W Surface Mount TO-252-4L

Buy Now Datasheet
FET, MOSFET Arrays - 785-1607-6-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
785-1607-6-ND
FET, MOSFET Arrays 785-1607-6-ND
Mosfet Array N and P-Channel, Common Drain 40V 12A 2W Surface Mount TO-252-4L

Mosfet Array N and P-Channel, Common Drain 40V 12A 2W Surface Mount TO-252-4L

Buy Now Datasheet
Singapore
40V 12A TO252 MOSFET Transistor
289-AOD609
40V 12A TO252 MOSFET Transistor 289-AOD609
MOSFET N/P-CH 40V 12A TO252-4L Product overview: AOD609 from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 12A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 12A, TO252, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-AOD609 can be used for catalog matching and distributor lookup.

MOSFET N/P-CH 40V 12A TO252-4L Product overview: AOD609 from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 12A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 12A, TO252, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-AOD609 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET N/P-CH 40V 12A TO252-4 - 62-AOD609 - Utmel Electronic Limited
Hong Kong, China
MOSFET N/P-CH 40V 12A TO252-4
62-AOD609
MOSFET N/P-CH 40V 12A TO252-4 62-AOD609
MOSFET N/P-CH 40V 12A TO252-4

MOSFET N/P-CH 40V 12A TO252-4

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOD609 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOD609
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOD609
MOSFET N/P-CH 40V 12A TO252-4L

MOSFET N/P-CH 40V 12A TO252-4L

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number AOD609 009813-AOD609 785-1607-1-ND 289-AOD609 62-AOD609 AOD609
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOD609 FET, MOSFET Arrays 40V 12A TO252 MOSFET Transistor MOSFET N/P-CH 40V 12A TO252-4 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; N and P-Channel, Common Drain P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 40 volts 40 volts 40 volts
IDSS 12000 milliamps
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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