Alpha & Omega Semiconductor, Ltd. FET, MOSFET Arrays AOD607

Description
Mosfet Array N and P-Channel Complementary 30V 12A (Tc) 2.1W Surface Mount TO-252-4L
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Description
Mosfet Array N and P-Channel Complementary 30V 12A (Tc) 2.1W Surface Mount TO-252-4L
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - AOD607-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
AOD607-ND
FET, MOSFET Arrays AOD607-ND
Mosfet Array N and P-Channel Complementary 30V 12A (Tc) 2.1W Surface Mount TO-252-4L

Mosfet Array N and P-Channel Complementary 30V 12A (Tc) 2.1W Surface Mount TO-252-4L

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOD607 - 078148-AOD607 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOD607
078148-AOD607
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOD607 078148-AOD607
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 078148-AOD607 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel Complementary FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252-4L Maximum Power Dissipation: 19W (Tc), 30W (Tc) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8A (Tc), 12A (Tc) Gate-Source Threshold Voltage: 2.6V @ 250μA, 2.4V @ 250μA Max Gate Charge: 7nC @ 4.5V, 12nC @ 4.5V Max Input Capacitance: 395pF @ 15V, 730pF @ 15V Maximum Rds On at Id,Vgs: 25 mOhm @ 8A, 10V, 27 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 86 pct. Supply and Demand Status: Balance

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 078148-AOD607
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel Complementary
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252-4L
Maximum Power Dissipation: 19W (Tc), 30W (Tc)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A (Tc), 12A (Tc)
Gate-Source Threshold Voltage: 2.6V @ 250μA, 2.4V @ 250μA
Max Gate Charge: 7nC @ 4.5V, 12nC @ 4.5V
Max Input Capacitance: 395pF @ 15V, 730pF @ 15V
Maximum Rds On at Id,Vgs: 25 mOhm @ 8A, 10V, 27 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 86 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
MOSFET N/P-CH 30V 12A TO252 - 62-AOD607 - Utmel Electronic Limited
Hong Kong, China
MOSFET N/P-CH 30V 12A TO252
62-AOD607
MOSFET N/P-CH 30V 12A TO252 62-AOD607
MOSFET N/P-CH 30V 12A TO252

MOSFET N/P-CH 30V 12A TO252

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOD607 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOD607
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOD607
MOSFET N/P-CH 30V 12A TO252-4L

MOSFET N/P-CH 30V 12A TO252-4L

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number AOD607-ND 078148-AOD607 62-AOD607 AOD607
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOD607 MOSFET N/P-CH 30V 12A TO252 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type TO-252 (DPAK); TO-252-5, DPAK (4 Leads + Tab) SOT3; TO-252 (DPAK); TO-252-4L
Polarity P-Channel
V(BR)DSS 30 volts
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