Alpha & Omega Semiconductor, Ltd. FET, MOSFET Arrays AOD606

Description
Mosfet Array N and P-Channel, Common Drain 40V 8A 1.6W, 1.7W Surface Mount TO-252-4L
Request a Quote Datasheet
Description
Mosfet Array N and P-Channel, Common Drain 40V 8A 1.6W, 1.7W Surface Mount TO-252-4L
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - 785-1118-2-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
785-1118-2-ND
FET, MOSFET Arrays 785-1118-2-ND
Mosfet Array N and P-Channel, Common Drain 40V 8A 1.6W, 1.7W Surface Mount TO-252-4L

Mosfet Array N and P-Channel, Common Drain 40V 8A 1.6W, 1.7W Surface Mount TO-252-4L

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOD606 - 112053-AOD606 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOD606
112053-AOD606
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOD606 112053-AOD606
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 112053-AOD606 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252-4L Maximum Power Dissipation: 1.6W, 1.7W Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 8A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 9.2nC @ 10V Max Input Capacitance: 404pF @ 20V Maximum Rds On at Id,Vgs: 33 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 85 pct. Supply and Demand Status: Sufficient

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 112053-AOD606
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252-4L
Maximum Power Dissipation: 1.6W, 1.7W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 8A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 9.2nC @ 10V
Max Input Capacitance: 404pF @ 20V
Maximum Rds On at Id,Vgs: 33 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 85 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - AOD606 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
AOD606
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays AOD606
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 785-1118-2-ND 112053-AOD606 AOD606
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOD606 Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
Package Type TO-252 (DPAK); TO-252-5, DPAK (4 Leads + Tab) SOT3; TO-252 (DPAK); TO-252-4L
Polarity P-Channel
V(BR)DSS 40 volts
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