Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOD4T60P

Description
N-Channel 600V 4A (Tc) 83W (Tc) Surface Mount TO-252 (DPAK)
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Description
N-Channel 600V 4A (Tc) 83W (Tc) Surface Mount TO-252 (DPAK)
Request a Quote Datasheet

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Single FETs, MOSFETs - AOD4T60P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
AOD4T60P-ND
Single FETs, MOSFETs AOD4T60P-ND
N-Channel 600V 4A (Tc) 83W (Tc) Surface Mount TO-252 (DPAK)

N-Channel 600V 4A (Tc) 83W (Tc) Surface Mount TO-252 (DPAK)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOD4T60P - 1016931-AOD4T60P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOD4T60P
1016931-AOD4T60P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOD4T60P 1016931-AOD4T60P
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1016931-AOD4T60P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 522pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.1 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 87 pct. Supply and Demand Status: Sufficient

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1016931-AOD4T60P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 522pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.1 Ohm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 87 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - AOD4T60P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
AOD4T60P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single AOD4T60P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number AOD4T60P-ND 1016931-AOD4T60P AOD4T60P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOD4T60P Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); TO-252, (D-Pak)
V(BR)DSS 600 volts
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