Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOD4286

Description
MOSFET N CH 100V 4A TO252
Request a Quote Datasheet
Description
MOSFET N CH 100V 4A TO252
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - AOD4286 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
AOD4286
Single FETs, MOSFETs AOD4286
MOSFET N CH 100V 4A TO252

MOSFET N CH 100V 4A TO252

Supplier's Site Datasheet
Single FETs, MOSFETs - AOD4286-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
AOD4286-ND
Single FETs, MOSFETs AOD4286-ND
N-Channel 100V 4A (Ta), 14A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK)

N-Channel 100V 4A (Ta), 14A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOD4286 - 1016924-AOD4286 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOD4286
1016924-AOD4286
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOD4286 1016924-AOD4286
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1016924-AOD4286 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Family Name: AOD4286 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 4A (Ta), 14A (Tc) Gate-Source Threshold Voltage: 2.9V @ 250μA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 390pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 68 mOhm @ 5A, 10V Alternative Parts (Cross-Reference): TSM900N10CP ROG; RSD200N10TL; IPD78CN10NGXT; DMN10H099SK3-13; Introduction Date: December 20, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 91 pct. Supply and Demand Status: Balance

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1016924-AOD4286
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Family Name: AOD4286
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 4A (Ta), 14A (Tc)
Gate-Source Threshold Voltage: 2.9V @ 250μA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 390pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 68 mOhm @ 5A, 10V
Alternative Parts (Cross-Reference): TSM900N10CP ROG; RSD200N10TL; IPD78CN10NGXT; DMN10H099SK3-13;
Introduction Date: December 20, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 91 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOD4286 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOD4286
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOD4286
MOSFET N CH 100V 4A TO252

MOSFET N CH 100V 4A TO252

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number AOD4286 AOD4286-ND 1016924-AOD4286 AOD4286
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOD4286 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 100 volts 100 volts
IDSS 4000 milliamps
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