Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOD2HC60

Description
N-Channel 600V 2.5A (Tc) 74W (Tc) Surface Mount TO-252 (DPAK)
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Description
N-Channel 600V 2.5A (Tc) 74W (Tc) Surface Mount TO-252 (DPAK)
Request a Quote Datasheet

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Single FETs, MOSFETs - AOD2HC60-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
AOD2HC60-ND
Single FETs, MOSFETs AOD2HC60-ND
N-Channel 600V 2.5A (Tc) 74W (Tc) Surface Mount TO-252 (DPAK)

N-Channel 600V 2.5A (Tc) 74W (Tc) Surface Mount TO-252 (DPAK)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOD2HC60 - 1016915-AOD2HC60 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOD2HC60
1016915-AOD2HC60
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOD2HC60 1016915-AOD2HC60
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1016915-AOD2HC60 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 466pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2 Ohm @ 800mA, 10V Alternative Parts (Cross-Reference): FDD5N60NZTM; STD3NC60; STDLED624; Popularity: Medium Fake Threat In the Open Market: 90 pct. Supply and Demand Status: Balance

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1016915-AOD2HC60
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 2.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 466pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2 Ohm @ 800mA, 10V
Alternative Parts (Cross-Reference): FDD5N60NZTM; STD3NC60; STDLED624;
Popularity: Medium
Fake Threat In the Open Market: 90 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOD2HC60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOD2HC60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOD2HC60
MOSFET N-CH 600V 2.5A TO252

MOSFET N-CH 600V 2.5A TO252

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number AOD2HC60-ND 1016915-AOD2HC60 AOD2HC60
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOD2HC60 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); TO-252, (D-Pak) 466 pF @ 100 V
V(BR)DSS 600 volts
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