Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOC2401

Description
P-Channel 30V 3A (Ta) 550mW (Ta) Surface Mount 4-AlphaDFN (1.57x1.57)
  • Single FETs, MOSFETs - AOC2401-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOC2401 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
P-Channel 30V 3A (Ta) 550mW (Ta) Surface Mount 4-AlphaDFN (1.57x1.57)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - AOC2401-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
AOC2401-ND
Single FETs, MOSFETs AOC2401-ND
P-Channel 30V 3A (Ta) 550mW (Ta) Surface Mount 4-AlphaDFN (1.57x1.57)

P-Channel 30V 3A (Ta) 550mW (Ta) Surface Mount 4-AlphaDFN (1.57x1.57)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOC2401 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOC2401
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOC2401
MOSFET P-CH 30V 3A 4ALPHADFN

MOSFET P-CH 30V 3A 4ALPHADFN

Supplier's Site

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors
Product Number AOC2401-ND AOC2401
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel
Unlock Full Specs
to access all available technical data

Similar Products

Low Power Transistors - 2N3019 - Micross Components, Inc.
Micross Components, Inc.
Low Power Transistors
2N3019
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
DC - 12 GHz, 55 Watt Discrete Power GaN on SiC HEMT - TGF2956 - Qorvo
Qorvo
DC - 12 GHz, 55 Watt Discrete Power GaN on SiC HEMT
TGF2956
Specs
Transistor Technology / Material GaN on SiC
Package Type Die
Power Gain 19.3 dB
View Details
TRANSISTORS - Transistors (BJT) - Single - 2PB709ASL/PA215 - 855010-2PB709ASL/PA215 - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2PB709ASL/PA215
2PB709ASL/PA215
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details