Alpha & Omega Semiconductor, Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOB418 AOB418

Description
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1016882-AOB418 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 9.5A (Ta), 105A (Tc) Gate-Source Threshold Voltage: 3.9V @ 250μA Max Gate Charge: 83nC @ 10V Max Input Capacitance: 5200pF @ 50V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 9.7 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 83 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1016882-AOB418 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 9.5A (Ta), 105A (Tc) Gate-Source Threshold Voltage: 3.9V @ 250μA Max Gate Charge: 83nC @ 10V Max Input Capacitance: 5200pF @ 50V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 9.7 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 83 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOB418 - 1016882-AOB418 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOB418
1016882-AOB418
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOB418 1016882-AOB418
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1016882-AOB418 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 9.5A (Ta), 105A (Tc) Gate-Source Threshold Voltage: 3.9V @ 250μA Max Gate Charge: 83nC @ 10V Max Input Capacitance: 5200pF @ 50V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 9.7 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 83 pct. Supply and Demand Status: Sufficient

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1016882-AOB418
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 9.5A (Ta), 105A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 250μA
Max Gate Charge: 83nC @ 10V
Max Input Capacitance: 5200pF @ 50V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 9.7 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 83 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1016882-AOB418
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOB418
Polarity N-Channel; N-Channel
V(BR)DSS 100 volts
PD 2100 to 333000 milliwatts
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