N-Channel 650V 25A (Tc) 357W (Tc) Surface Mount TO-263 (D2Pak)
N-Channel 650V 25A (Tc) 357W (Tc) Surface Mount TO-263 (D2Pak)
N-Channel 650V 25A (Tc) 357W (Tc) Surface Mount TO-263 (D2Pak)
MOSFET N-CH 650V 25A TO263
Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1016859-AOB25S65L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 357W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 25A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 26.4nC @ 10V
Max Input Capacitance: 1278pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 190 mOhm @ 12.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 76 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 650V 25A TO263
MOSFET N-CH 650V 25A TO263
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 785-1539-1-ND | AOB25S65L | 1016859-AOB25S65L | AOB25S65L | 62-AOB25S65L |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOB25S65L | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 650V 25A TO263 |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; SOT3; TO-263 (D2Pak) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||
| V(BR)DSS | 650 volts | 650 volts | 650 volts | ||
| IDSS | 25000 milliamps |
