Alpha & Omega Semiconductor, Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOB25S65L AOB25S65L

Description
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1016859-AOB25S65L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 357W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 25A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 26.4nC @ 10V Max Input Capacitance: 1278pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 190 mOhm @ 12.5A, 10V Popularity: Medium Fake Threat In the Open Market: 76 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1016859-AOB25S65L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 357W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 25A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 26.4nC @ 10V Max Input Capacitance: 1278pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 190 mOhm @ 12.5A, 10V Popularity: Medium Fake Threat In the Open Market: 76 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOB25S65L - 1016859-AOB25S65L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOB25S65L
1016859-AOB25S65L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOB25S65L 1016859-AOB25S65L
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1016859-AOB25S65L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 357W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 25A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 26.4nC @ 10V Max Input Capacitance: 1278pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 190 mOhm @ 12.5A, 10V Popularity: Medium Fake Threat In the Open Market: 76 pct. Supply and Demand Status: Sufficient

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1016859-AOB25S65L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 357W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 25A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 26.4nC @ 10V
Max Input Capacitance: 1278pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 190 mOhm @ 12.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 76 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - AOB25S65L - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
AOB25S65L
Single FETs, MOSFETs AOB25S65L
MOSFET N-CH 650V 25A TO263

MOSFET N-CH 650V 25A TO263

Supplier's Site Datasheet
Single FETs, MOSFETs - 785-1539-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-1539-1-ND
Single FETs, MOSFETs 785-1539-1-ND
N-Channel 650V 25A (Tc) 357W (Tc) Surface Mount TO-263 (D2Pak)

N-Channel 650V 25A (Tc) 357W (Tc) Surface Mount TO-263 (D2Pak)

Buy Now Datasheet
Single FETs, MOSFETs - 785-1539-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-1539-2-ND
Single FETs, MOSFETs 785-1539-2-ND
N-Channel 650V 25A (Tc) 357W (Tc) Surface Mount TO-263 (D2Pak)

N-Channel 650V 25A (Tc) 357W (Tc) Surface Mount TO-263 (D2Pak)

Buy Now Datasheet
Single FETs, MOSFETs - 785-1539-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-1539-6-ND
Single FETs, MOSFETs 785-1539-6-ND
N-Channel 650V 25A (Tc) 357W (Tc) Surface Mount TO-263 (D2Pak)

N-Channel 650V 25A (Tc) 357W (Tc) Surface Mount TO-263 (D2Pak)

Buy Now Datasheet
MOSFET N-CH 650V 25A TO263 - 62-AOB25S65L - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 650V 25A TO263
62-AOB25S65L
MOSFET N-CH 650V 25A TO263 62-AOB25S65L
MOSFET N-CH 650V 25A TO263

MOSFET N-CH 650V 25A TO263

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOB25S65L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOB25S65L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOB25S65L
MOSFET N-CH 650V 25A TO263

MOSFET N-CH 650V 25A TO263

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1016859-AOB25S65L AOB25S65L 785-1539-1-ND 62-AOB25S65L AOB25S65L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOB25S65L Single FETs, MOSFETs Single FETs, MOSFETs MOSFET N-CH 650V 25A TO263 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 650 volts 650 volts 650 volts
PD 357000 milliwatts 357000 milliwatts 357000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-263; SOT3; TO-263 (D2Pak) TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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