Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOB11C60L

Description
N-Channel 600V 11A (Tc) 278W (Tc) Surface Mount TO-263 (D2Pak)
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Description
N-Channel 600V 11A (Tc) 278W (Tc) Surface Mount TO-263 (D2Pak)
Request a Quote Datasheet

Suppliers

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Product
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Single FETs, MOSFETs - AOB11C60L-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
AOB11C60L-ND
Single FETs, MOSFETs AOB11C60L-ND
N-Channel 600V 11A (Tc) 278W (Tc) Surface Mount TO-263 (D2Pak)

N-Channel 600V 11A (Tc) 278W (Tc) Surface Mount TO-263 (D2Pak)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOB11C60L - 1016841-AOB11C60L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOB11C60L
1016841-AOB11C60L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOB11C60L 1016841-AOB11C60L
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1016841-AOB11C60L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 278W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 2000pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 400 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): STB11N65M5; AOB11S60L; IPB60R30C6; Popularity: Medium Fake Threat In the Open Market: 92 pct. Supply and Demand Status: Sufficient

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1016841-AOB11C60L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 278W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 2000pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 400 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): STB11N65M5; AOB11S60L; IPB60R30C6;
Popularity: Medium
Fake Threat In the Open Market: 92 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - AOB11C60L - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
AOB11C60L
Single FETs, MOSFETs AOB11C60L
MOSFET N-CH 600V 11A TO263

MOSFET N-CH 600V 11A TO263

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOB11C60L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOB11C60L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOB11C60L
MOSFET N-CH 600V 11A TO263

MOSFET N-CH 600V 11A TO263

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number AOB11C60L-ND 1016841-AOB11C60L AOB11C60L AOB11C60L
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOB11C60L Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; TO-263 (D2Pak) TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 2000 pF @ 100 V
V(BR)DSS 600 volts 600 volts
PD 278000 milliwatts 278000 milliwatts
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