Alpha & Omega Semiconductor, Ltd. FET, MOSFET Arrays AO8830

Description
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 1.5W Surface Mount 8-TSSOP
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 1.5W Surface Mount 8-TSSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - 785-1099-2-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
785-1099-2-ND
FET, MOSFET Arrays 785-1099-2-ND
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 1.5W Surface Mount 8-TSSOP

Mosfet Array 2 N-Channel (Dual) Common Drain 20V 1.5W Surface Mount 8-TSSOP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO8830 - 097684-AO8830 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO8830
097684-AO8830
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO8830 097684-AO8830
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 097684-AO8830 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Family Name: AO8830 Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 1.5W Drain-Source Breakdown Voltage: 20V Gate-Source Threshold Voltage: 1V @ 1mA Max Gate Charge: 5.2nC @ 4.5V Max Input Capacitance: 290pF @ 10V Maximum Rds On at Id,Vgs: 27 mOhm @ 6A, 10V Alternative Parts (Cross-Reference): FDW9926NZ; FDW9926NZ-NL; DMG6968UTS-13; DMG6968UTS; Introduction Date: March 27, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 87 pct. Supply and Demand Status: Sufficient

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 097684-AO8830
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Family Name: AO8830
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Maximum Power Dissipation: 1.5W
Drain-Source Breakdown Voltage: 20V
Gate-Source Threshold Voltage: 1V @ 1mA
Max Gate Charge: 5.2nC @ 4.5V
Max Input Capacitance: 290pF @ 10V
Maximum Rds On at Id,Vgs: 27 mOhm @ 6A, 10V
Alternative Parts (Cross-Reference): FDW9926NZ; FDW9926NZ-NL; DMG6968UTS-13; DMG6968UTS;
Introduction Date: March 27, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 87 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AO8830 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AO8830
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AO8830
MOSFET 2N-CH 20V 8TSSOP

MOSFET 2N-CH 20V 8TSSOP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 785-1099-2-ND 097684-AO8830 AO8830
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO8830 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type "8-TSSOP (0.173"", 4.40mm Width)" SOT3; 8-TSSOP
Polarity N-Channel
V(BR)DSS 20 volts
Unlock Full Specs
to access all available technical data

Similar Products