Alpha & Omega Semiconductor, Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO8818 AO8818

Description
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 078119-AO8818 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 1.5W Drain-Source Breakdown Voltage: 30V Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 14nC @ 4.5V Max Input Capacitance: 1060pF @ 15V Maximum Rds On at Id,Vgs: 18 mOhm @ 7A, 10V Popularity: Medium Fake Threat In the Open Market: 81 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 078119-AO8818 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 1.5W Drain-Source Breakdown Voltage: 30V Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 14nC @ 4.5V Max Input Capacitance: 1060pF @ 15V Maximum Rds On at Id,Vgs: 18 mOhm @ 7A, 10V Popularity: Medium Fake Threat In the Open Market: 81 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO8818 - 078119-AO8818 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO8818
078119-AO8818
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO8818 078119-AO8818
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 078119-AO8818 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 1.5W Drain-Source Breakdown Voltage: 30V Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 14nC @ 4.5V Max Input Capacitance: 1060pF @ 15V Maximum Rds On at Id,Vgs: 18 mOhm @ 7A, 10V Popularity: Medium Fake Threat In the Open Market: 81 pct. Supply and Demand Status: Balance

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 078119-AO8818
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Maximum Power Dissipation: 1.5W
Drain-Source Breakdown Voltage: 30V
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 14nC @ 4.5V
Max Input Capacitance: 1060pF @ 15V
Maximum Rds On at Id,Vgs: 18 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 81 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - AO8818-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
AO8818-ND
FET, MOSFET Arrays AO8818-ND
Mosfet Array 2 N-Channel (Dual) Common Drain 30V 1.5W Surface Mount 8-TSSOP

Mosfet Array 2 N-Channel (Dual) Common Drain 30V 1.5W Surface Mount 8-TSSOP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AO8818 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AO8818
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AO8818
MOSFET 2N-CH 30V 8TSSOP

MOSFET 2N-CH 30V 8TSSOP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 078119-AO8818 AO8818-ND AO8818
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO8818 FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
V(BR)DSS 30 volts
PD 1500 milliwatts
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