Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 009775-AO6602L
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel Complementary
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 1.15W
Drain-Source Breakdown Voltage: 30V
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 8.5nC @ 10V
Max Input Capacitance: 240pF @ 15V
Maximum Rds On at Id,Vgs: 75 mOhm @ 3.1A, 10V
Alternative Parts (Cross-Reference): DMG6601LVT-7; AO6601; AO6602;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 89 pct.
Supply and Demand Status: Balance
MOSFET N/P-CH 30V 6TSOP Product overview: AO6602L from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-AO6602L can be used for catalog matching and distributor lookup.
MOSFET N/P-CH 30V 6-TSOP
Mosfet Array N and P-Channel Complementary 30V 1.15W Surface Mount 6-TSOP
MOSFET N/P-CH 30V 6TSOP
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 009775-AO6602L | 289-AO6602L | AO6602L | 785-1077-2-ND | AO6602L |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO6602L | 30V MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; N and P-Channel Complementary | |||
| V(BR)DSS | 30 volts | 30 volts | |||
| PD | 1150 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |