MOSFET N-CH 30V 6.9A 6TSOP
Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 009771-AO6400
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Family Name: AO6400
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SC-74, SOT-457
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.9A (Ta)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 12nC @ 4.5V
Max Input Capacitance: 1030pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 28 mOhm @ 6.9A, 10V
Alternative Parts (Cross-Reference): TPC6005(TE85L,M); TPC6005(TE85L,F,M); TPC6005(TE85L,F); TPC6005;
Introduction Date: March 27, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 78 pct.
Supply and Demand Status: Balance
N-Channel 30V 6.9A (Ta) 2W (Ta) Surface Mount 6-TSOP
N-Channel 30V 6.9A (Ta) 2W (Ta) Surface Mount 6-TSOP
N-Channel 30V 6.9A (Ta) 2W (Ta) Surface Mount 6-TSOP
MOSFET N-CH 30V 6.9A 6TSOP
30V 6.9A 28mΩ@6.9A,10V 2W 1.4V@250uA N Channel TSOP-6 MOSFETs ROHS
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | AO6400 | 009771-AO6400 | 785-1067-2-ND | AO6400 | AO6400 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO6400 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||
| IDSS | 6900 milliamps | ||||
| PD | 2000 milliwatts | 2000 milliwatts | 2000 milliwatts |