Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1016827-AO5803E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: SC-89-6
Maximum Power Dissipation: 400mW
Drain-Source Breakdown Voltage: 20V
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Input Capacitance: 100pF @ 10V
Maximum Rds On at Id,Vgs: 800 mOhm @ 600mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 91 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs
Mosfet Array 2 P-Channel (Dual) 20V 400mW Surface Mount SC-89-6
MOSFET 2P-CH 20V SC89-6 Product overview: AO5803E from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-AO5803E can be used for catalog matching and distributor lookup.
MOSFET 2P-CH 20V SC89-6
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1016827-AO5803E | 785-1561-2-ND | 289-AO5803E | AO5803E |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO5803E | FET, MOSFET Arrays | 20V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | |||
| V(BR)DSS | 20 volts | |||
| PD | 400 milliwatts |