Alpha & Omega Semiconductor, Ltd. FET, MOSFET Arrays AO4807L

Description
Mosfet Array 2 P-Channel (Dual) 30V 6A 2W Surface Mount 8-SOIC
Request a Quote Datasheet
Description
Mosfet Array 2 P-Channel (Dual) 30V 6A 2W Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - AO4807L-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
AO4807L-ND
FET, MOSFET Arrays AO4807L-ND
Mosfet Array 2 P-Channel (Dual) 30V 6A 2W Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 30V 6A 2W Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - AO4807L - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
AO4807L
FET, MOSFET Arrays AO4807L
MOSFET 2P-CH 30V 6A 8-SOIC

MOSFET 2P-CH 30V 6A 8-SOIC

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO4807L - 199077-AO4807L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO4807L
199077-AO4807L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO4807L 199077-AO4807L
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 199077-AO4807L Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6A Gate-Source Threshold Voltage: 2.4V @ 250μA Max Gate Charge: 16nC @ 10V Max Input Capacitance: 760pF @ 15V Maximum Rds On at Id,Vgs: 35 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 79 pct. Supply and Demand Status: Limited

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 199077-AO4807L
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6A
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 760pF @ 15V
Maximum Rds On at Id,Vgs: 35 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 79 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AO4807L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AO4807L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AO4807L
MOSFET 2P-CH 30V 6A 8SOIC

MOSFET 2P-CH 30V 6A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number AO4807L-ND AO4807L 199077-AO4807L AO4807L
Product Name FET, MOSFET Arrays FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO4807L Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) SOT3; 8-SO
Polarity P-Channel; 2 P-Channel (Dual) P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
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