Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AO4722

Description
N-Channel 30V 8.5A (Ta) 1.7W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet
Description
N-Channel 30V 8.5A (Ta) 1.7W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - 785-1297-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-1297-2-ND
Single FETs, MOSFETs 785-1297-2-ND
N-Channel 30V 8.5A (Ta) 1.7W (Ta) Surface Mount 8-SOIC

N-Channel 30V 8.5A (Ta) 1.7W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO4722 - 139424-AO4722 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO4722
139424-AO4722
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO4722 139424-AO4722
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 139424-AO4722 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Body) Polarity: N-Channel Power Dissipation (Max): 1.7W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8.5A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 1100pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 mOhm @ 11.6A, 10V Popularity: Medium Fake Threat In the Open Market: 77 pct. Supply and Demand Status: Limited

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 139424-AO4722
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Body)
Polarity: N-Channel
Power Dissipation (Max): 1.7W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.5A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 1100pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 11.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 77 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AO4722 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AO4722
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AO4722
MOSFET N-CH 30V 8.5A 8SOIC

MOSFET N-CH 30V 8.5A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 785-1297-2-ND 139424-AO4722 AO4722
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO4722 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SOIC 8-SOIC (0.154, 3.90mm Width)
V(BR)DSS 30 volts
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