Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AO4712

Description
N-Channel 30V 13A (Ta) 3.1W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet
Description
N-Channel 30V 13A (Ta) 3.1W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 785-1051-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-1051-2-ND
Single FETs, MOSFETs 785-1051-2-ND
N-Channel 30V 13A (Ta) 3.1W (Ta) Surface Mount 8-SOIC

N-Channel 30V 13A (Ta) 3.1W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO4712 - 102202-AO4712 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO4712
102202-AO4712
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO4712 102202-AO4712
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 102202-AO4712 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Body) Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 13A (Ta) Gate-Source Threshold Voltage: 2.4V @ 250μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 1885pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 14.5 mOhm @ 11.2A, 10V Popularity: Medium Fake Threat In the Open Market: 93 pct. Supply and Demand Status: Sufficient

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 102202-AO4712
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Body)
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13A (Ta)
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 1885pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 14.5 mOhm @ 11.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 93 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
MOSFET N-CH 30V 11.2A 8-SOIC - 62-AO4712 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 30V 11.2A 8-SOIC
62-AO4712
MOSFET N-CH 30V 11.2A 8-SOIC 62-AO4712
MOSFET N-CH 30V 11.2A 8-SOIC

MOSFET N-CH 30V 11.2A 8-SOIC

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - AO4712 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
AO4712
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single AO4712
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 785-1051-2-ND 102202-AO4712 62-AO4712 AO4712
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO4712 MOSFET N-CH 30V 11.2A 8-SOIC Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Polarity N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SOIC
V(BR)DSS 30 volts
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