Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1016782-AO4441
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.1W (Ta)
Family Name: AO4441
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 1120pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 4A, 10V
Alternative Parts (Cross-Reference): BSO613SPVGXT; BSO613SPV G; Si9407BDY-T1-E3; SI9407BDY-T1-GE3;
Introduction Date: September 02, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 82 pct.
Supply and Demand Status: Limited
Application Field: Used in Communications & Networking, Computers & Computer Peripherals, Imaging, Video & Vision, Industrial
P-Channel 60V 4A (Ta) 3.1W (Ta) Surface Mount 8-SOIC
P-Channel 60V 4A (Ta) 3.1W (Ta) Surface Mount 8-SOIC
P-Channel 60V 4A (Ta) 3.1W (Ta) Surface Mount 8-SOIC
MOSFET P-CH 60V 4A 8-SOIC
60V 4A 3.1W 100mΩ@10V,4A 3V@250uA P Channel SOIC-8 MOSFETs ROHS
MOSFET P-CH 60V 4A 8SOIC
| Win Source Electronics | DigiKey | Utmel Electronic Limited | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1016782-AO4441 | 785-1196-1-ND | 62-AO4441 | AO4441 | AO4441 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO4441 | Single FETs, MOSFETs | MOSFET P-CH 60V 4A 8-SOIC | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | ||
| V(BR)DSS | 60 volts | -60 volts | 60 volts | ||
| PD | 3100 milliwatts | 3100 milliwatts | 3100 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | SOT3; 8-SOIC | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154, 3.90mm Width) |
