MOSFET P-CH 30V 4.3A SOT23-3L
P-Channel 30V 4.3A (Ta) 1.4W (Ta) Surface Mount SOT-23-3
P-Channel 30V 4.3A (Ta) 1.4W (Ta) Surface Mount SOT-23-3
P-Channel 30V 4.3A (Ta) 1.4W (Ta) Surface Mount SOT-23-3
Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 009722-AO3407A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.4W (Ta)
Family Name: AO3407A
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3L
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.3A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 830pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 48 mOhm @ 4.3A, 10V
Alternative Parts (Cross-Reference): AP2329GN-HF; AP2329GN-HF-3TR; PMV50EPEA; PMV50EPEAR;
Introduction Date: May 06, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 87 pct.
Supply and Demand Status: Sufficient
30V 4.3A 48mΩ@10V,4.3A 1.4W 3V@250uA P Channel SOT-23-3L MOSFETs ROHS
MOSFET P-CH 30V 4.3A SOT23-3L
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | AO3407A | 785-1006-6-ND | 009722-AO3407A | AO3407A | AO3407A |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO3407A | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||
| IDSS | 4300 milliamps | ||||
| PD | 1400 milliwatts | 1400 milliwatts | 1400 milliwatts |