Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AO3400

MOSFET N-CH 30V 5.8A SOT23-3

N-Channel 30V 5.8A (Ta) 1.4W (Ta) Surface Mount SOT-23-3

MOSFET N-CH 30V 5.8A SOT23-3 Product overview: AO3400 from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.8A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.8A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-AO3400 can be used for catalog matching and distributor lookup.

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1144743-AO3400
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Part Status: Preliminary
Family Name: AO3400
Categories: Discrete Semiconductor Products
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.aosmd.com
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Maximum): 1.4W
Alternative Parts (Cross-Reference): TSM3400CX RFG; TSM3400CX RF; TSM3400CX; TSM320N03CX RFG;
Introduction Date: May 06, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 75 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 5.8A
Rds On (Maximum) at Id, Vgs: 28mOhm at 5.8A, 10V
Gate Source Voltage(th) (Maximum) at Id: 1.45V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 7nC at 4.5V
Gate Source Voltage (Maximum): ±12V
Input Capacitance (Ciss) (Maximum) at Vds: 630pF at 15V