Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AO3160

Description
N-Channel 600V 40mA (Ta) 1.39W (Ta) Surface Mount SOT-23A-3
Request a Quote Datasheet
Description
N-Channel 600V 40mA (Ta) 1.39W (Ta) Surface Mount SOT-23A-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - AO3160-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
AO3160-ND
Single FETs, MOSFETs AO3160-ND
N-Channel 600V 40mA (Ta) 1.39W (Ta) Surface Mount SOT-23A-3

N-Channel 600V 40mA (Ta) 1.39W (Ta) Surface Mount SOT-23A-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO3160 - 078092-AO3160 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO3160
078092-AO3160
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO3160 078092-AO3160
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 078092-AO3160 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.39W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 40mA (Ta) Gate-Source Threshold Voltage: 3.2V @ 8μA Max Gate Charge: 1.5nC @ 10V Max Input Capacitance: 15pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 500 Ohm @ 16mA, 10V Popularity: Medium Fake Threat In the Open Market: 83 pct. Supply and Demand Status: Sufficient

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 078092-AO3160
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.39W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 40mA (Ta)
Gate-Source Threshold Voltage: 3.2V @ 8μA
Max Gate Charge: 1.5nC @ 10V
Max Input Capacitance: 15pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 500 Ohm @ 16mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 83 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AO3160 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AO3160
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AO3160
MOSFET N-CH 600V 40MA SOT23-3

MOSFET N-CH 600V 40MA SOT23-3

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
AO3160
Triode/MOS Tube/Transistor >> MOSFETs AO3160
600V 40mA 1.39W 500Ω@10V,16mA 3.2V@8uA N Channel SOT-23A MOSFETs ROHS

600V 40mA 1.39W 500Ω@10V,16mA 3.2V@8uA N Channel SOT-23A MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number AO3160-ND 078092-AO3160 AO3160 AO3160
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO3160 Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23
V(BR)DSS 600 volts 600 volts
PD 1390 milliwatts 1390 milliwatts
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