Alliance Memory, Inc. Memory AS7C325632-10BINTR

Description
SRAM - Asynchronous Memory IC 8Mb (1M x 8) Parallel 10ns 90-TFBGA (8x13)
Request a Quote Datasheet
Description
SRAM - Asynchronous Memory IC 8Mb (1M x 8) Parallel 10ns 90-TFBGA (8x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS7C325632-10BINTR-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 8Mb (1M x 8) Parallel 10ns 90-TFBGA (8x13)

SRAM - Asynchronous Memory IC 8Mb (1M x 8) Parallel 10ns 90-TFBGA (8x13)

Buy Now Datasheet
IC SRAM 8MBIT PARALLEL 90TFBGA

IC SRAM 8MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Memory - AS7C325632-10BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 90-TFBGA (8x13)

SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 90-TFBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - AS7C325632-10BINTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS7C325632-10BINTR
Integrated Circuits (ICs) - Memory AS7C325632-10BINTR
IC SRAM 8MBIT PARALLEL 90TFBGA

IC SRAM 8MBIT PARALLEL 90TFBGA

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS7C325632-10BINTR-ND AS7C325632-10BINTR AS7C325632-10BINTR AS7C325632-10BINTR
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 8000 kbits 8000 kbits 8000 kbits 8000 kbits
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