IC SRAM 8MBIT PARALLEL 90TFBGA Product overview: AS7C325632-10BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS7C325632-10BIN
SRAM - Asynchronous Memory IC 8Mb (1M x 8) Parallel 10ns 90-TFBGA (8x13)
SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 90-TFBGA (8x13)
IC SRAM 8MBIT PARALLEL 90TFBGA
IC SRAM 8MBIT PARALLEL 90TFBGA
| ERSAELECTRONICS PTE. LTD. | DigiKey | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-AS7C325632-10BIN | 1450-1434-ND | AS7C325632-10BIN | AS7C325632-10BIN | AS7C325632-10BIN |
| Product Name | Memory IC and Storage Component | Memory | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | Volatile; SRAM Chip | SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip |
| Access Time | 10 ns | 10 ns | 10 ns | 10 ns | |
| Cycle Time | 10 ns | ||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
