Alliance Memory, Inc. Memory AS7C31026C-10BIN

Description
SRAM - Asynchronous Memory IC 1Mbit Parallel 10 ns 48-BGA (7x7)
Datasheet
Description
SRAM - Asynchronous Memory IC 1Mbit Parallel 10 ns 48-BGA (7x7)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS7C31026C-10BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 10 ns 48-BGA (7x7)

SRAM - Asynchronous Memory IC 1Mbit Parallel 10 ns 48-BGA (7x7)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - AS7C31026C-10BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
AS7C31026C-10BIN
Integrated Circuits (ICs) - Memory - Memory AS7C31026C-10BIN
IC SRAM 1MBIT PARALLEL 48BGA

IC SRAM 1MBIT PARALLEL 48BGA

Supplier's Site
IC SRAM 1MBIT PARALLEL 48BGA

IC SRAM 1MBIT PARALLEL 48BGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS7C31026C-10BIN AS7C31026C-10BIN AS7C31026C-10BIN
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 10 ns 10 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 1000 kbits 1000 kbits 1000 kbits
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