Alliance Memory, Inc. Memory AS7C31026B-10JIN

Description
SRAM - Asynchronous Memory IC 1Mbit Parallel 10 ns 44-SOJ
Datasheet
Description
SRAM - Asynchronous Memory IC 1Mbit Parallel 10 ns 44-SOJ
Datasheet

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Product
Description
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Memory - AS7C31026B-10JIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 10 ns 44-SOJ

SRAM - Asynchronous Memory IC 1Mbit Parallel 10 ns 44-SOJ

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Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS7C31026B-10JIN
Integrated Circuits (ICs) - Memory - Memory AS7C31026B-10JIN
IC SRAM 1MBIT PARALLEL 44SOJ

IC SRAM 1MBIT PARALLEL 44SOJ

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number AS7C31026B-10JIN AS7C31026B-10JIN
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 10 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 1000 kbits 1000 kbits
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