Alliance Memory, Inc. Integrated Circuits (ICs) - Memory - Memory AS7C31026B-10JIN

Description
IC SRAM 1MBIT PARALLEL 44SOJ
Datasheet
Description
IC SRAM 1MBIT PARALLEL 44SOJ
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS7C31026B-10JIN
Integrated Circuits (ICs) - Memory - Memory AS7C31026B-10JIN
IC SRAM 1MBIT PARALLEL 44SOJ

IC SRAM 1MBIT PARALLEL 44SOJ

Supplier's Site
Memory - AS7C31026B-10JIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 10 ns 44-SOJ

SRAM - Asynchronous Memory IC 1Mbit Parallel 10 ns 44-SOJ

Buy Now Datasheet

Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number AS7C31026B-10JIN AS7C31026B-10JIN
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; SRAM Chip SRAM; SRAM Chip
Cycle Time 10 ns
Density 1000 kbits 1000 kbits
Package Type 10 ns 44-BSOJ (0.400\", 10.16mm Width)
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882828 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Memory - AS4SD4M16 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 32000 kbits
View Details