Alliance Memory, Inc. Memory AS7C31026B-10JIN

Description
SRAM - Asynchronous Memory IC 1Mbit Parallel 10 ns 44-SOJ
Datasheet
Description
SRAM - Asynchronous Memory IC 1Mbit Parallel 10 ns 44-SOJ
Datasheet

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Description
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Memory - AS7C31026B-10JIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 10 ns 44-SOJ

SRAM - Asynchronous Memory IC 1Mbit Parallel 10 ns 44-SOJ

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Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS7C31026B-10JIN
Integrated Circuits (ICs) - Memory - Memory AS7C31026B-10JIN
IC SRAM 1MBIT PARALLEL 44SOJ

IC SRAM 1MBIT PARALLEL 44SOJ

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Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number AS7C31026B-10JIN AS7C31026B-10JIN
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 10 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 1000 kbits 1000 kbits
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