Alliance Memory, Inc. Memory AS6CE4016B-45ZIN

Description
SRAM - Asynchronous Memory IC 4Mbit Parallel 45 ns 44-TSOP II
Datasheet
Description
SRAM - Asynchronous Memory IC 4Mbit Parallel 45 ns 44-TSOP II
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS6CE4016B-45ZIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 45 ns 44-TSOP II

SRAM - Asynchronous Memory IC 4Mbit Parallel 45 ns 44-TSOP II

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS6CE4016B-45ZIN
Integrated Circuits (ICs) - Memory - Memory AS6CE4016B-45ZIN
2.7V~3.6V 4MB (X16) LP SRAM, 45N

2.7V~3.6V 4MB (X16) LP SRAM, 45N

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number AS6CE4016B-45ZIN AS6CE4016B-45ZIN
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 45 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 4000 kbits 4000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71V3557S85PFGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 8.5 ns
Density 4500 kbits
View Details
SN74ACT3632 512 x 36 x 2 bidirectional synchronous FIFO memory - SN74ACT3632-15PQG4 - Texas Instruments
Specs
Memory Category FIFO
Package Type BQFP
View Details
5 suppliers
Memory - 315-1345-000 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Flash Memory - 1712222P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 1024000 kbits
Package Type SOIC; SOIC
View Details