Alliance Memory, Inc. Integrated Circuits (ICs) - Memory - Memory AS6CE4016B-45BIN

Description
2.7V~3.6V 4MB (X16) LP SRAM, 45N
Datasheet
Description
2.7V~3.6V 4MB (X16) LP SRAM, 45N
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS6CE4016B-45BIN
Integrated Circuits (ICs) - Memory - Memory AS6CE4016B-45BIN
2.7V~3.6V 4MB (X16) LP SRAM, 45N

2.7V~3.6V 4MB (X16) LP SRAM, 45N

Supplier's Site
Memory - AS6CE4016B-45BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 45 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 4Mbit Parallel 45 ns 48-TFBGA (6x8)

Buy Now Datasheet

Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number AS6CE4016B-45BIN AS6CE4016B-45BIN
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; SRAM Chip SRAM; SRAM Chip
Cycle Time 45 ns
Density 4000 kbits 4000 kbits
Package Type BGA; 48-TFBGA (6x8) BGA; 48-LFBGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - RAM - MT5C1008DCJ-45/IT - 1221437-MT5C1008DCJ-45/IT - Win Source Electronics
Specs
Operating Temperature -40 C (-40 F)
Density 1000 kbits
Pins 32
View Details
2 suppliers
Memory - CY14B104L-BA25XCT - Lingto Electronic Limited
Infineon Technologies AG
Specs
Memory Category NVSRAM; SRAM Chip
Access Time 25 ns
Density 4000 kbits
View Details
2 suppliers
Flash Memory - 1882769P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 2048000 kbits
Package Type SOIC; SOIC
View Details
Memory - 71V3557S85PFGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 8.5 ns
Density 4500 kbits
View Details