Alliance Memory, Inc. Integrated Circuits (ICs) - Memory - Memory AS6CE4016B-45BIN

Description
2.7V~3.6V 4MB (X16) LP SRAM, 45N
Datasheet
Description
2.7V~3.6V 4MB (X16) LP SRAM, 45N
Datasheet

Suppliers

Company
Product
Description
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Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS6CE4016B-45BIN
Integrated Circuits (ICs) - Memory - Memory AS6CE4016B-45BIN
2.7V~3.6V 4MB (X16) LP SRAM, 45N

2.7V~3.6V 4MB (X16) LP SRAM, 45N

Supplier's Site
Memory - AS6CE4016B-45BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 45 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 4Mbit Parallel 45 ns 48-TFBGA (6x8)

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Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number AS6CE4016B-45BIN AS6CE4016B-45BIN
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; SRAM Chip SRAM; SRAM Chip
Cycle Time 45 ns
Density 4000 kbits 4000 kbits
Package Type BGA; 48-TFBGA (6x8) BGA; 48-LFBGA
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