Alliance Memory, Inc. Memory AS6CE4016B-45BIN

Description
SRAM - Asynchronous Memory IC 4Mbit Parallel 45 ns 48-TFBGA (6x8)
Datasheet
Description
SRAM - Asynchronous Memory IC 4Mbit Parallel 45 ns 48-TFBGA (6x8)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS6CE4016B-45BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 45 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 4Mbit Parallel 45 ns 48-TFBGA (6x8)

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS6CE4016B-45BIN
Integrated Circuits (ICs) - Memory - Memory AS6CE4016B-45BIN
2.7V~3.6V 4MB (X16) LP SRAM, 45N

2.7V~3.6V 4MB (X16) LP SRAM, 45N

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number AS6CE4016B-45BIN AS6CE4016B-45BIN
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 45 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 4000 kbits 4000 kbits
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