Alliance Memory, Inc. Memory AS6CE1016A-45ZIN

Description
SRAM - Asynchronous Memory IC 1Mbit Parallel 45 ns 44-TSOP II
Datasheet
Description
SRAM - Asynchronous Memory IC 1Mbit Parallel 45 ns 44-TSOP II
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS6CE1016A-45ZIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 45 ns 44-TSOP II

SRAM - Asynchronous Memory IC 1Mbit Parallel 45 ns 44-TSOP II

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS6CE1016A-45ZIN
Integrated Circuits (ICs) - Memory - Memory AS6CE1016A-45ZIN
2.7V~3.6V 1MB (X16) LP SRAM, 45N

2.7V~3.6V 1MB (X16) LP SRAM, 45N

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number AS6CE1016A-45ZIN AS6CE1016A-45ZIN
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 45 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 1000 kbits 1000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - RAM - MT5C1008F45L/883C - 1215637-MT5C1008F45L/883C - Win Source Electronics
Specs
Memory Category SRAM Chip
Operating Temperature -40 C (-40 F)
Density 1000 kbits
View Details
2 suppliers
Memory - 1936360 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - 0436A4ACLAA-4F - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 4.3 ns
Density 4000 kbits
View Details