The AS6C8016B-55ZIN is an 8Mb (512K x 16-bit) low power CMOS SRAM designed for applications requiring low power consumption and fast access times. It features an access time of 55ns and operates with a single power supply voltage ranging from 2.7V to 3.6V. The typical operating current is 10mA, while the standby current is notably low at 2.5¬µA, making it suitable for battery-powered devices. This memory chip is fully static and TTL compatible, ensuring ease of integration into various systems. It is packaged in a 44-pin 400mil TSOP II format and is rated for industrial temperature ranges from -40¬8C to 85¬8C. The AS6C8016B-55ZIN is particularly well-suited for low power applications and battery backup nonvolatile memory solutions, providing reliable data retention with a minimum voltage of 1.5V.
SRAM - Asynchronous Memory IC 8Mbit Parallel 55 ns 44-TSOP II
MEMORY
| Quarktwin Technology Ltd. | Acme Chip Technology Co., Limited | |
|---|---|---|
| Product Category | Memory Chips | Memory Chips |
| Product Number | AS6C8016B-55ZINTR | AS6C8016B-55ZINTR |
| Product Name | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Access Time | 55 ns | |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | |
| Density | 8000 kbits | 8000 kbits |
