Alliance Memory, Inc. Integrated Circuits (ICs) - Memory - Memory AS6C8016B-45BINTR

Description
MEMORY
Datasheet
Description
MEMORY
Datasheet

Suppliers

Company
Product
Description
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Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS6C8016B-45BINTR
Integrated Circuits (ICs) - Memory - Memory AS6C8016B-45BINTR
MEMORY

MEMORY

Supplier's Site
Memory - AS6C8016B-45BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 8Mbit Parallel 45 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 8Mbit Parallel 45 ns 48-TFBGA (6x8)

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Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number AS6C8016B-45BINTR AS6C8016B-45BINTR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; SRAM Chip SRAM; SRAM Chip
Cycle Time 45 ns
Density 8000 kbits 8000 kbits
Supply Voltage Surface Mount 3.6V; 2.7V ~ 3.6V
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