Alliance Memory, Inc. Integrated Circuits (ICs) - Memory - Memory AS6C8016B-45BINTR

Description
MEMORY
Datasheet
Description
MEMORY
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS6C8016B-45BINTR
Integrated Circuits (ICs) - Memory - Memory AS6C8016B-45BINTR
MEMORY

MEMORY

Supplier's Site
Memory - AS6C8016B-45BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 8Mbit Parallel 45 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 8Mbit Parallel 45 ns 48-TFBGA (6x8)

Buy Now Datasheet

Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number AS6C8016B-45BINTR AS6C8016B-45BINTR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; SRAM Chip SRAM; SRAM Chip
Cycle Time 45 ns
Density 8000 kbits 8000 kbits
Supply Voltage Surface Mount 3.6V; 2.7V ~ 3.6V
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 1882599 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details
Integrated Circuits (ICs) - Memory - Memory - 10415FC10 - Acme Chip Technology Co., Limited
Specs
Memory Category Volatile; SRAM Chip
Cycle Time 10 ns
Density 1 kbits
View Details
2 suppliers
Memory - RAM - MT5C1008ECA55L883C - 1232483-MT5C1008ECA55L883C - Win Source Electronics
Specs
Memory Category SRAM Chip
Operating Temperature -55 C (-67 F)
Density 1000 kbits
View Details
2 suppliers
Memory - 448-CY14B116N-Z45XITTR-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 16000 kbits
View Details
3 suppliers