Alliance Memory, Inc. Integrated Circuits (ICs) - Memory - Memory AS6C8016B-45BINTR

Description
MEMORY
Datasheet
Description
MEMORY
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS6C8016B-45BINTR
Integrated Circuits (ICs) - Memory - Memory AS6C8016B-45BINTR
MEMORY

MEMORY

Supplier's Site
Memory - AS6C8016B-45BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 8Mbit Parallel 45 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 8Mbit Parallel 45 ns 48-TFBGA (6x8)

Buy Now Datasheet

Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number AS6C8016B-45BINTR AS6C8016B-45BINTR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; SRAM Chip SRAM; SRAM Chip
Cycle Time 45 ns
Density 8000 kbits 8000 kbits
Supply Voltage Surface Mount 3.6V; 2.7V ~ 3.6V
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 6116SA45DB - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 45 ns
Density 16 kbits
View Details
Integrated Circuits (ICs) - Memory - Memory - NM27C020T200 - Shenzhen Shengyu Electronics Technology Limited
Specs
Memory Category EPROM; Non-Volatile
Cycle Time 200 ns
Density 2000 kbits
View Details
2 suppliers
Memory IC and Storage Component - 774-CY62126DV30L-55ZSXE - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Volatile; SRAM Chip
Access Time 55 ns
Cycle Time 55 ns
View Details
3 suppliers
Flash Memory - 1882828 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details