IC SRAM 8MBIT PARALLEL 44TSOP II Product overview: AS6C8016-55ZIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS6C8016-55ZIN can be used for catalog matching and distributor lookup.
Manufacturer: Alliance Memory, Inc.
Win Source Part Number: 133050-AS6C8016-55ZI
Packaging: Tray
Mounting: SMD (SMT)
Technology: SRAM - Asynchronous
Memory Type: Volatile
Memory Size: 8Mb (512K x 16)
Access Time: 55ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 44-TSOP II
Supply Voltage - Operating: 2.7 V to 5.5 V
Memory Format: SRAM
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Quantity per package: 135
SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 55ns 44-TSOP II
IC SRAM 8MBIT PARALLEL 44TSOP II
IC SRAM 8MBIT PARALLEL 44TSOP II
SRAM - Asynchronous Memory IC 8Mbit Parallel 55 ns 44-TSOP II
IC SRAM 8MBIT PARALLEL 44TSOP II
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| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | ODG (Origin Data Global) | Karl Kruse GmbH & Co. KG | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-AS6C8016-55ZIN | 133050-AS6C8016-55ZIN | 1450-1041-ND | AS6C8016-55ZIN | AS6C8016-55ZIN | AS6C8016-55ZIN | AS6C8016-55ZIN | AS6C8016-55ZIN |
| Product Name | Memory IC and Storage Component | Memory - SRAM - AS6C8016-55ZIN | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory | Memory | SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM |
| Memory Category | Volatile; SRAM Chip | Volatile; SRAM Chip | SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip | SRAM - Asynchronous; SRAM Chip | SRAM Chip |
| Access Time | 55 ns | 55 ns | 55 ns | 55 ns | 55 ns | |||
| Cycle Time | 55 ns | 55 ns | ||||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
