Manufacturer: Alliance Memory, Inc.
Win Source Part Number: 140433-AS6C8016-55BI
Packaging: Tray
Mounting: SMD (SMT)
Technology: SRAM - Asynchronous
Memory Type: Volatile
Memory Size: 8Mb (512K x 16)
Access Time: 55ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 48-TFBGA (6x8)
Supply Voltage - Operating: 2.7 V to 5.5 V
Memory Format: SRAM
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
Quantity per package: 480
SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 55ns 48-TFBGA (6x8)
SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM Product overview: AS6C8016-55BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.5V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 5.5V, Memory IC and Storage Component, Memory Card, Module Accessories. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 500-AS6C8016-55BIN can be used for catalog matching and distributor lookup.
IC SRAM 8MBIT PARALLEL 48TFBGA
IC SRAM 8MBIT PARALLEL 48TFBGA
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SRAM - Asynchronous Memory IC 8Mbit Parallel 55 ns 48-TFBGA (6x8)
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Karl Kruse GmbH & Co. KG | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 140433-AS6C8016-55BIN | 1450-1040-ND | 500-AS6C8016-55BIN | AS6C8016-55BIN | AS6C8016-55BIN | AS6C8016-55BIN | AS6C8016-55BIN |
| Product Name | Memory - SRAM - AS6C8016-55BIN | Memory | 5.5V Memory IC and Storage Component | Integrated Circuits (ICs) - Memory - Memory | Memory | SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM | Memory |
| Memory Category | Volatile; SRAM Chip | SRAM Chip | SDR; SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip | SRAM Chip | SRAM; SRAM Chip |
| Access Time | 55 ns | 55 ns | 55 ns | 55 ns | |||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||||
| Package Type | BGA; 48-TFBGA (6x8) | 48-LFBGA | BGA; Tray | TBGA48 | BGA; 48-LFBGA |
