Win Source Part Number: 1202789-AS6C8008-55B
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 480
Mounting: SMD (SMT)
Technology: SRAM - Asynchronous
Memory Type: Volatile
Memory Size: 8Mb (1M x 8)
Access Time: 55 ns
Voltage - Supply: 2.7V ~ 5.5V
Package / Case: 48-LFBGA
Supplier Device Package: 48-TFBGA (6x8)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: SRAM
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
ECCN: 3A991B2A
Fake Threat In the Open Market: 57 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0041
Mfr: Alliance Memory, Inc.
Other Names: 1450-1187,AS6C8008-5
Base Product Number: AS6C8008
IC SRAM 8MBIT PARALLEL 48TFBGA Product overview: AS6C8008-55BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS6C8008-55BIN can be used for catalog matching and distributor lookup.
SRAM - Asynchronous Memory IC 8Mbit Parallel 55 ns 48-TFBGA (6x8)
IC SRAM 8MBIT PARALLEL 48TFBGA
IC SRAM 8MBIT PARALLEL 48TFBGA
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| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Karl Kruse GmbH & Co. KG | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 1202789-AS6C8008-55BIN | 774-AS6C8008-55BIN | AS6C8008-55BIN | AS6C8008-55BIN | AS6C8008-55BIN | AS6C8008-55BIN |
| Product Name | Integrated Circuits (ICs) - Memory | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM |
| Memory Category | Volatile; SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip | SRAM Chip |
| Access Time | 55 ns | 55 ns | 55 ns | 55 ns | ||
| Cycle Time | 55 ns | 55 ns | 55 ns | |||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
