Alliance Memory, Inc. Integrated Circuits (ICs) - Memory - Memory AS6C6264-55PCNTR

Description
MEMORY
Description
MEMORY
Datasheet
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The AS6C6264-55PCNTR is a low power CMOS static random access memory (SRAM) device with a capacity of 64Kbits, organized as 8,192 words by 8 bits. It features an access time of 55ns and operates with a power supply range of 2.7V to 5.5V. The typical operating current is 15mA at 3.0V, while the standby current is as low as 1µA. This SRAM is designed for low power applications, making it suitable for battery backup and nonvolatile memory applications. The device is available in a 28-pin 600 mil PDIP package and is fully compatible with both 5V and 3.3V systems. It supports all TTL-compatible inputs and outputs, ensuring ease of integration into various designs. The AS6C6264-55PCNTR is also RoHS compliant, indicating it meets environmental standards. Its operational temperature range is from 0°C to 70°C, making it suitable for commercial applications.

Datasheet Summary
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The AS6C6264-55PCNTR is a low power CMOS static random access memory (SRAM) device with a capacity of 64Kbits, organized as 8,192 words by 8 bits. It features an access time of 55ns and operates with a power supply range of 2.7V to 5.5V. The typical operating current is 15mA at 3.0V, while the standby current is as low as 1µA. This SRAM is designed for low power applications, making it suitable for battery backup and nonvolatile memory applications. The device is available in a 28-pin 600 mil PDIP package and is fully compatible with both 5V and 3.3V systems. It supports all TTL-compatible inputs and outputs, ensuring ease of integration into various designs. The AS6C6264-55PCNTR is also RoHS compliant, indicating it meets environmental standards. Its operational temperature range is from 0°C to 70°C, making it suitable for commercial applications.

Suppliers

Company
Product
Description
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Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS6C6264-55PCNTR
Integrated Circuits (ICs) - Memory - Memory AS6C6264-55PCNTR
MEMORY

MEMORY

Supplier's Site
Memory - AS6C6264-55PCNTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 64Kbit Parallel 55 ns 28-PDIP

SRAM - Asynchronous Memory IC 64Kbit Parallel 55 ns 28-PDIP

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Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number AS6C6264-55PCNTR AS6C6264-55PCNTR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; SRAM Chip SRAM; SRAM Chip
Cycle Time 55 ns
Density 64 kbits 64 kbits
Supply Voltage Through Hole 2.7V ~ 5.5V
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