Alliance Memory, Inc. Memory AS6C6264-55PCNTR

Description
SRAM - Asynchronous Memory IC 64Kbit Parallel 55 ns 28-PDIP
Description
SRAM - Asynchronous Memory IC 64Kbit Parallel 55 ns 28-PDIP
Datasheet
Datasheet Summary
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The AS6C6264-55PCNTR is a low power CMOS static random access memory (SRAM) device with a capacity of 64Kbits, organized as 8,192 words by 8 bits. It features an access time of 55ns and operates with a power supply range of 2.7V to 5.5V. The typical operating current is 15mA at 3.0V, while the standby current is as low as 1¬µA. This SRAM is designed for low power applications, making it suitable for battery backup and nonvolatile memory applications. The device is available in a 28-pin 600 mil PDIP package and is fully compatible with both 5V and 3.3V systems. It supports all TTL-compatible inputs and outputs, ensuring ease of integration into various designs. The AS6C6264-55PCNTR is also RoHS compliant, indicating it meets environmental standards. Its operational temperature range is from 0¬?C to 70¬?C, making it suitable for commercial applications.

Datasheet Summary
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The AS6C6264-55PCNTR is a low power CMOS static random access memory (SRAM) device with a capacity of 64Kbits, organized as 8,192 words by 8 bits. It features an access time of 55ns and operates with a power supply range of 2.7V to 5.5V. The typical operating current is 15mA at 3.0V, while the standby current is as low as 1¬µA. This SRAM is designed for low power applications, making it suitable for battery backup and nonvolatile memory applications. The device is available in a 28-pin 600 mil PDIP package and is fully compatible with both 5V and 3.3V systems. It supports all TTL-compatible inputs and outputs, ensuring ease of integration into various designs. The AS6C6264-55PCNTR is also RoHS compliant, indicating it meets environmental standards. Its operational temperature range is from 0¬?C to 70¬?C, making it suitable for commercial applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - AS6C6264-55PCNTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 64Kbit Parallel 55 ns 28-PDIP

SRAM - Asynchronous Memory IC 64Kbit Parallel 55 ns 28-PDIP

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS6C6264-55PCNTR
Integrated Circuits (ICs) - Memory - Memory AS6C6264-55PCNTR
MEMORY

MEMORY

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number AS6C6264-55PCNTR AS6C6264-55PCNTR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 55 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 64 kbits 64 kbits
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