Alliance Memory, Inc. Memory AS6C6264-55PCNTR

Description
SRAM - Asynchronous Memory IC 64Kbit Parallel 55 ns 28-PDIP
Description
SRAM - Asynchronous Memory IC 64Kbit Parallel 55 ns 28-PDIP
Datasheet
Datasheet Summary
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The AS6C6264-55PCNTR is a low power CMOS static random access memory (SRAM) device with a capacity of 64Kbits, organized as 8,192 words by 8 bits. It features an access time of 55ns and operates with a power supply range of 2.7V to 5.5V. The typical operating current is 15mA at 3.0V, while the standby current is as low as 1µA. This SRAM is designed for low power applications, making it suitable for battery backup and nonvolatile memory applications. The device is available in a 28-pin 600 mil PDIP package and is fully compatible with both 5V and 3.3V systems. It supports all TTL-compatible inputs and outputs, ensuring ease of integration into various designs. The AS6C6264-55PCNTR is also RoHS compliant, indicating it meets environmental standards. Its operational temperature range is from 0°C to 70°C, making it suitable for commercial applications.

Datasheet Summary
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The AS6C6264-55PCNTR is a low power CMOS static random access memory (SRAM) device with a capacity of 64Kbits, organized as 8,192 words by 8 bits. It features an access time of 55ns and operates with a power supply range of 2.7V to 5.5V. The typical operating current is 15mA at 3.0V, while the standby current is as low as 1µA. This SRAM is designed for low power applications, making it suitable for battery backup and nonvolatile memory applications. The device is available in a 28-pin 600 mil PDIP package and is fully compatible with both 5V and 3.3V systems. It supports all TTL-compatible inputs and outputs, ensuring ease of integration into various designs. The AS6C6264-55PCNTR is also RoHS compliant, indicating it meets environmental standards. Its operational temperature range is from 0°C to 70°C, making it suitable for commercial applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - AS6C6264-55PCNTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 64Kbit Parallel 55 ns 28-PDIP

SRAM - Asynchronous Memory IC 64Kbit Parallel 55 ns 28-PDIP

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS6C6264-55PCNTR
Integrated Circuits (ICs) - Memory - Memory AS6C6264-55PCNTR
MEMORY

MEMORY

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number AS6C6264-55PCNTR AS6C6264-55PCNTR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 55 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 64 kbits 64 kbits
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